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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2058 DESCRIPTION *With TO-220F package *Complement to type 2SB1366 *Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A *Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS *With general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 60 60 7 3 0.5 1.5 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=2A ;IB=0.2A IC=0.5A;VCE=5V VCB=60V;IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 60 MIN 60 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT COB 2SD2058 TYP. MAX UNIT V 1.5 3.0 10 1.0 V V A mA 3.0 35 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=2.0A; IB1=-IB2=0.2A VCC=30V ,RL=15A 0.65 1.30 0.65 s s s hFE Classifications O 60-120 Y 100-200 G 150-300 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2058 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2058 4 |
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